Cree demonstrates 400 Watts of RF power for
GaN
S-Band transistor
Cree, Inc. have recently demonstrated a new high-power gallium nitride
(GaN) RF power transistor for use in mobile WiMAX applications.
The discrete transistor produces a record 400 watts of peak pulsed RF
power at 3.3 GHz with 10.6 dB of associated power gain and 62-percent
drain efficiency when operated at 40 volts.
“We are pleased to announce that we have achieved this 400-watt
milestone. To our knowledge, this is the highest output power publicly
reported for a single packaged GaN transistor in this frequency range,”
said Jim Milligan, Cree’s product manager for wide bandgap radio
frequency products.
“Upcoming mobile WiMAX applications are expected to require average
orthogonal frequency-division multiplexing (OFDM) output power between
10 and 25 watts with peak-to-average ratios (PAR) as high as 12 dB. This
will require transistors that are capable of delivering up to 400 watts
of peak RF output power.”
About WiMAX
WiMAX is a standards-based wireless technology that provides high-throughput
connections over long distances. It can be used for multiple applications,
including last-mile broadband access, hotspots, cellular backhaul, high-speed
enterprise connectivity, and non-line-of-sight mobile connectivity.
www.cree.com
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